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NTUD3129P
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t = 5 s (Note 3)
Symbol
R q JA
Max
1000
600
Unit
° C/W
3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = -250 m A
-20
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = -5.0 V
V GS = 0 V, V DS = -16 V
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
-50
-200
-100
nA
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 5.0 V
± 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain-to-Source On Resistance
V GS(TH)
R DS(ON)
V GS = V DS , I D = -250 m A
V GS = -4.5 V, I D = -100 mA
-0.4
4.0
-1.0
5.0
V
V GS = -2.5 V, I D = -50 mA
5.0
7.0
V GS = -1.8 V, I D = -20 mA
V GS = -1.5 V, I D = -10 mA
V GS = -1.2 V, I D = -1.0 mA
6.5
7.5
11.5
10
14
W
Forward Transconductance
g FS
V DS = -5.0 V, I D = -125 mA
0.26
S
Source-Drain Diode Voltage
V SD
V GS = 0 V, I D = -10 mA
-0.65
-1.0
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
12
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
f = 1 MHz, V GS = 0 V
V DS = -15 V
2.7
1.0
pF
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 4)
Turn-On Delay Time
t d(ON)
20
Rise Time
Turn-Of f Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DD = -15 V,
I D = -180 mA, R G = 2.0 W
37
112
97
ns
4. Switching characteristics are independent of operating junction temperatures
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